TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
Description
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
TMOS V Power Field Effect Transistor
P–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell d...
