N-Channel MOSFET. 2SK3760 Datasheet

2SK3760 MOSFET. Datasheet pdf. Equivalent

Part 2SK3760
Description N-Channel MOSFET
Feature www.DataSheet4U.com 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) .
Manufacture Toshiba Semiconductor
Datasheet
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2SK3760
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2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3760
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)
High forward transfer admittance: |Yfs| = 2.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
101.05. 5mmaax x
unit
44..77mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
11..55mmaxax
0.81
0.81 max
00..4455
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
600 V
600 V
±30 V
3.5 A
IDP 14
PD 60 W
EAS 6.3 mJ
IAR DataShe3.e5t4U.com A
EAR 6 mJ
Tch 150 °C
Tstg
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.08 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
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2SK3760
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2SK3760
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
IGSS
VGS = ±25 V, V DS = 0 V
  ±10 µA
V (BR) GSS ID = ±10 µA, V GS = 0 V
±30   V
IDSS
VDS = 600 V, V GS = 0 V
  100 µA
V (BR) DSS ID = 10 mA, VGS = 0 V
600   V
Vth VDS = 10 V, ID = 1 mA
2.0 4.0 V
RDS (ON) VGS = 10 V, ID = 1.8 A
1.7 2.2
Yf s
VDS = 10 V, ID = 1.8 A
0.7 2.5
S
Ciss
Crss
Coss
VDS = 25 V, V GS = 0 V, f = 1 MHz
550
6 pF
60
tr
10 V
VGS
ID = 1.8 A VOUT
12
0V
ton
50
RL = 45
111
ns
tf 13
VDD ∼− 200 V
toff Duty <= 1%, tw = 10 µs
80
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Total gate charge
Gate-source charge
Gate-drain charge
Qg 16
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 3.5 A 10 nC
Qgd
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6
Source-Drain Ratings and Characteristics (Ta = 25°C)
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Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
ID R P
VDSF
trr
Qrr
Test Condition
IDR = 3.5 A, V GS = 0 V
IDR = 3.5 A, V GS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
  3.5 A
  14 A
  −1.7 V
1400
ns
9  µC
Marking
K3760
Lot Number
TYPE
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
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