2SK3760 Datasheet PDF Download, Toshiba Semiconductor





(PDF) 2SK3760 Datasheet Download

Part Number 2SK3760
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS6)
Manufacture Toshiba Semiconductor
Total Page 6 Pages
PDF Download Download 2SK3760 Datasheet PDF

Features: www.DataSheet4U.com 2SK3760 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type ( -MOS‡Y ) 2SK3760 unit•F ‚•‚• Switching Regulator Appli cations 3.84•} 0 .2 3.84•}0.2 10. 5 10.5max max 4.7max 4.7 max 1.3 6.6 max 6.6 max. 1.3 • • • • Low drain-source ON resistance: R DS (ON) = 1.7ƒ¶ (typ.) High forward transfer admittance: |Yfs| = 2.5S (typ.) Low lea kage current: IDSS = 100 ƒÊ A (V DS = 600 V) Enhancement-mode: V th = 2.0~4. 0 V (V DS = 10 V, ID = 1 mA) 13.4 13.4 min min. 3.9 max 3.9 max. Maximum Ra tings (Ta = 25°C) Characteristics Drai n-source voltage Drain-gate voltage (RG S = 20 kΩ ) Gate-source voltage DC Dr ain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 60 0 ±30 3.5 14 60 6.3 W mJ A mJ °C °C Unit V V V A 15.6 max 15.6 max. 2.7 1.5 1.5 max max 0.81 0.81 max 0.45 0.45 2.7 2.54 2.54 2.7 1 2 3 Drain pow er dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive av.

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2SK3760
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3760
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 1.7 (typ.)
High forward transfer admittance: |Yfs| = 2.5S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
101.05. 5mmaax x
unit
44..77mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
11..55mmaxax
0.81
0.81 max
00..4455
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
600 V
600 V
±30 V
3.5 A
IDP 14
PD 60 W
EAS 6.3 mJ
IAR DataShe3.e5t4U.com A
EAR 6 mJ
Tch 150 °C
Tstg
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA
Characteristics
Symbol
Max Unit
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.08 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.9 mH, IAR = 3.5 A, RG = 25
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
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1 2004-02-26

                 






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