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SSP2N60A
Advanced Power MOSFET
Description
www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 Ω (Typ.) 1 2 3 SSP2N60A BVDSS = 600 V RDS(on) = 5.0 Ω ID = 2 A TO-220 1.Gate 2. Drain 3. Source Absolu...
Fairchild Semiconductor
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