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IRHN9130

International Rectifier
Part Number IRHN9130
Manufacturer International Rectifier
Description P-CHANNEL TRANSISTOR
Published Oct 15, 2006
Detailed Description www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.886 REPETITIVE AVALANCHE...
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IRHN9130
IRHN9130

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PD-9.
886 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.
30Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.
No compensation in gate drive circuitry is required.
These devices are also capable of surviving transient ionization puls...


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