double diode. BAW101S Datasheet

BAW101S diode. Datasheet pdf. Equivalent

Part BAW101S
Description High voltage double diode
Feature DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Produ.
Manufacture NXP
Datasheet
Download BAW101S Datasheet

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S Datasheet
NEW PRODUCT Features • Fast Switching Speed: max. 50ns • Hi BAW101S Datasheet
SMD Type High Voltage Double Diode BAW101S Diodes +0.11.2 BAW101S Datasheet
Recommendation Recommendation Datasheet BAW101S Datasheet




BAW101S
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
MBD128
BAW101S
High voltage double diode
Product data sheet
2003 May 13



BAW101S
NXP Semiconductors
High voltage double diode
Product data sheet
BAW101S
FEATURES
Small plastic SMD package
High switching speed: max. 50 ns
High continuous reverse voltage: 300 V
Electrically insulated diodes.
APPLICATIONS
High voltage switching
Automotive
Communication.
PINNING
PIN
1
2
3
4
5
6
DESCRIPTION
anode 1
n.c.
cathode 2
anode 2
n.c.
cathode 1
DESCRIPTION
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
handbook, halfpage
65
4
65 4
MARKING
TYPE NUMBER
BAW101S
MARKING CODE(1)
K2
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
12
Top view
3
MBL892
123
Fig.1 Simplified outline (SOT363) and symbol.
2003 May 13
2





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