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IRFZ24N

Part Number	IRFZ24N
Manufacturer	NXP
Description	N-channel enhancement mode TrenchMOS transistor
Published	Oct 17, 2006
Detailed Description	www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GE...
Datasheet	IRFZ24N PDF File

Overview

www.
DataSheet4U.
com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.
The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV.
It is intended for use in switched mode power supplies and general purpose switching applications.
IRFZ24N QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 17 45 175 70 UNIT V A ...

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