200V P-CHANNEL ENHANCEMENT MODE MOSFET
V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT223 package variant engineered to increase spacing between
high voltage pins.
• Active clamping of primary side MOSFETs in 48 volt DC-DC converters
TAPE WIDTH (mm)
PINOUT - TOP VIEW
ISSUE 1 - DECEMBER 2005