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DATA SHEET
NPNSILICON EPITAXIAL TRANSISTOR
2SC4783
NPNSILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPNsilicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0. 3 ± 0. 05 0. 1 +0. 1 –0. 05
FEATURES
1. 6 ± 0. 1 0. 8 ± 0. 1
• High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V
3 0 to 0. 1 2 0. 2 +0. 1 –0 0. 5 0. 5 1. 0 1. 6 ± 0. 1 0. 6 0. 75 ± 0. 05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
60 50 5. 0 100 200 200 150 –55 to + 150
V V V mA mA mW °C °C
Total Power Dissipation (T...
C4783 PDF File
