2SJ658 Switching Applications Datasheet

2SJ658 Datasheet, PDF, Equivalent


Part Number

2SJ658

Description

High-Speed Switching Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SJ658 Datasheet


2SJ658
Ordering number : ENN7552
www.DataSheet4U.com
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
2SJ658
P-Channel Silicon MOSFET
2SJ658
High-Speed Switching Applications
Package Dimensions
unit : mm
2178
[2SJ658]
5.0
4.0 4.0
0.45
0.5
0.45 0.44
123
1.3 1.3
1 : Source
2 : Drain
3 : Gate
SANYO : NP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Symbol
Conditions
V(BR)DSS
IDSS
ID=--1mA, VGS=0
VDS=--20V, VGS=0
Ratings
--20
±10
--2
--8
0.7
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
min
--20
Ratings
typ
max
Unit
V
--10 µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31504 TS IM TA-100561 No.7552-1/4

2SJ658
2SJ658
Continued from preceding page.
Parameter
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--4V
ID=--0.5A, VGS=--2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4V, ID=--2A
VDS=--10V, VGS=--4V, ID=--2A
VDS=--10V, VGS=--4V, ID=--2A
IS=--2A, VGS=0
Switching Time Test Circuit
VIN
0V
--4V
VIN
PW=10µs
D.C.1%
G
VDD= --10V
ID= --1A
RL=10
D VOUT
2SJ658
P.G 50S
Ratings
min typ
--0.3
1.8 3
115
145
410
60
40
9
27
42
38
4.5
0.6
1.2
--0.9
max
±10
--1.4
150
210
--1.2
Unit
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ID -- VDS
--2.0
--1.6
--1.2
--0.8 VGS= --1.0V
--0.4
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT02753
--4.0
VDS= --10V
--3.5
ID -- VGS
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
Gate-to-Source Voltage, VGS -- V IT02754
No.7552-2/4


Features www.DataSheet4U.com Ordering number : E NN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applicati ons Features • • • Package Dimen sions unit : mm 2178 [2SJ658] 5.0 4.0 4 .0 Low ON-resistance. High-speed switc hing. 2.5V drive. 0.45 0.5 0.6 2.0 5. 0 0.45 0.44 1 2 3 14.0 1 : Sourc e 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Rat ings at Ta=25°C Parameter Drain-to-Sou rce Voltage Gate-to-Source Voltage Drai n Current (DC) Drain Current (Pulse) Al lowable Power Dissipation Channel Tempe rature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, dut y cycle≤1% Conditions Ratings -20 ±1 0 --2 --8 0.7 150 --55 to +150 Unit V V A A W °C °C Electrical Characterist ics at Ta=25°C Parameter Drain-to-Sour ce Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS Cond itions ID=--1mA, VGS=0 VDS=-20V, VGS=0 Ratings min --20 --10 typ max Unit V µ A Continued on next page. Any and all SANYO products described or contained he.
Keywords 2SJ658, datasheet, pdf, Sanyo Semicon Device, High-Speed, Switching, Applications, SJ658, J658, 658, 2SJ65, 2SJ6, 2SJ, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)