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FDC638APZ
N-Channel MOSFET
Description
FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.5A, 43mΩ Features Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM ...
Fairchild Semiconductor
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