Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEM3259
5
FEATURES
30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface m...
