PD - 94966
IRF1010NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
D
VDSS = 55V RDS(on) = 11mΩ
G S
ID = 85A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techni...
