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IRF2807L

International Rectifier

HEXFET Power MOSFET


Description
PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l HEXFET® Power MOSFET D IRF2807S IRF2807L VDSS = 75V RDS(on) = 13mΩ G S ID = 82A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques t...



International Rectifier

IRF2807L

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