MGFC47A4450 GaAs FET Datasheet

MGFC47A4450 Datasheet, PDF, Equivalent


Part Number

MGFC47A4450

Description

C band internally matched power GaAs FET

Manufacture

Mitsubishi Electric

Total Page 4 Pages
Datasheet
Download MGFC47A4450 Datasheet


MGFC47A4450
< C band internally matched power GaAs FET >
MGFC47A4450
4.4 – 5.0 GHz BAND / 50W
DESCRIPTION
The MGFC47A4450 is an internally impedance-matched
GaAs power FET especially designed for use in 4.4 – 5.0
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
P1dB=50W (TYP.) @f=4.4 – 5.0GHz
High power gain
GLP=10.5dB (TYP.) @f=4.4 – 5.0GHz
High power added efficiency
PAE=40% (TYP.) @f=4.4 – 5.0GHz
APPLICATION
Radio Link
OUTLINE DRAWING
Unit : millimeters
2 4+/-0.3
(1)
(2 )
(3)
0 .7 +/-0.15
20 .4 +/-0.2
1 6.7
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=9.8A RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-20
VGSO Gate to source breakdown voltage
-10
IGR Reverse gate current
-130
IGF Forward gate current
168
PT *1 Total power dissipation
166
Tch Cannel temperature
175
Tstg Storage temperature
*1 : Tc=25C
-65 to +175
Unit
V
V
mA
mA
W
C
C
GF-53
(1) : Gate
(2) : Source
(3) : Drain
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Electrical characteristics (Ta=25C)
Symbol
Parameter
Test conditions
VGS(off) Gate to source cut-off voltage
P1dB
Output power at 1dB gain compression
GLP
Linear Power Gain
ID Drain current
PAE
Power added efficiency
Rth(ch-c) *2 Thermal resistance
*2 : Channel-case
VDS=3V,ID=168mA
VDS=10V,ID(RF off)=9.8A
f=4.4 – 5.0GHz
delta Vf method
Min.
-1
46
9.5
-
-
-
Limits
Typ.
-
47
10.5
11
40
0.8
Max.
-4
-
-
-
-
0.9
Unit
V
dBm
dB
A
%
C/W
Publication Date : Apr., 2011
1

MGFC47A4450
< C band internally matched power GaAs FET >
MGFC47A4450
4.4 – 5.0 GHz BAND / 50W
MGFC47A4450 TYPICAL CHARACTERISTICS
GLP vs. f
P1dB vs. f
f = 4.4GHz
Pout , PAE vs. Pin
f = 4.7GHz
f = 5.0GHz
Publication Date : Apr., 2011
2


Features < C band internally matched power GaAs F ET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The herme tically sealed metal-ceramic package gu arantees high reliability. FEATURES Cla ss AB operation Internally matched to 5 0(ohm) system  High output power P1d B=50W (TYP.) @f=4.4 – 5.0GHz  High power gain GLP=10.5dB (TYP.) @f=4.4 5.0GHz  High power added efficienc y PAE=40% (TYP.) @f=4.4 – 5.0GHz APPL ICATION  Radio Link 2MIN . 17 .4 + /-0.2 8.0+/-0.2 2.4 2 MIN. OUTLINE DR AWING Unit : millimeters 2 4+/-0.3 ( 1) (2 ) (3) 0 .7 +/-0.15 20 .4 +/-0.2 1 6.7 1.3 15.8 4.7 m ax. 2 .3 +/-0 . 2 0.1+/-0.05 RECOMMENDED BIAS CONDITIO NS  VDS=10V  ID=9.8A  RG=10ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -20 VGSO G ate to source breakdown voltage -10 IGR Reverse gate current .
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