ATTACH ADHESIVE. 84-1LMISR4 Datasheet


84-1LMISR4 ADHESIVE. Datasheet pdf. Equivalent


84-1LMISR4


ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE
TECHNICAL DATASHEET

ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE
DESCRIPTION ABLEBOND® 84-1LMISR4 electrically conductive die attach adhesive has been formulated for use in high throughput, automatic die attach equipment. The rheology of ABLEBOND 84-1LMISR4 adhesive allows minimum adhesive dispense and die put down dwell

ABLEBOND® 84-1LMISR4

times, without tailing or stringing problems. The unique combination of adhesive properties makes this material one the most widely used die attach materials in the semiconductor industry.

FEATURES • Excellent dispensability with minimal tailing and stringing • Box oven cure Test Method ATM-0018 ATM-0089 ATM-0067 ATM-0068 Test Description 10 x 10 mm Si die on glass slide Test Method ATM-0031

Typical Uncured Properties Filler Type Viscosity @ 25ºC Thixotropic Index
www.DataSheet4U.com

ABLEBOND 84-1LMISR4 Silver 8000 cP 5.6 18 hours 1 year ABLEBOND 84-1LMISR4 5.3% 1 hour @ 175ºC

Test Description

Brookfield CP51 @ 5 rpm Viscosity @ 0.5/Viscosity @ 5 rpm Physical worklife by % filler

Work Life @ 25ºC Storage Life @ -40ºC Cure Process Data Weight Loss on Cure Recommended Cure Condition Alternate Cure Condition
(1) (1)

3 - 5ºC / min ramp to 175ºC + 1 hour @ 175ºC

The ramp was observed to yield reduced bondline voiding and increased strength

The above cure profiles are guideline recommendations. Cure conditions (time and temperature) ma...



84-1LMISR4
TECHNICAL DATASHEET
ABLEBOND® 84-1LMISR4
ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE
DESCRIPTION
ABLEBOND® 84-1LMISR4 electrically conductive die
attach adhesive has been formulated for use in high
throughput, automatic die attach equipment. The rhe-
ology of ABLEBOND 84-1LMISR4 adhesive allows
minimum adhesive dispense and die put down dwell
times, without tailing or stringing problems. The unique
combination of adhesive properties makes this material
one the most widely used die attach materials in the
semiconductor industry.
FEATURES
• Excellent dispensability with minimal tailing and stringing
• Box oven cure
Typical Uncured Properties
Filler Type
ABLEBOND 84-1LMISR4
Silver
Test Description
Test
Method
Viscosity @ 25ºC
8000 cP
Brookfield CP51 @ 5 rpm
ATM-0018
Thixotropic Index
www.DataSheet4U.com Work Life @ 25ºC
5.6
18 hours
Viscosity @ 0.5/Viscosity @ 5 rpm
Physical worklife by % filler
ATM-0089
ATM-0067
Storage Life @ -40ºC
Cure Process Data
Weight Loss on Cure
1 year
ABLEBOND 84-1LMISR4
Test Description
5.3%
10 x 10 mm Si die on glass slide
ATM-0068
Test
Method
ATM-0031
Recommended Cure Condition
1 hour @ 175ºC
Alternate Cure Condition (1)
3 - 5ºC / min ramp to 175ºC + 1 hour @ 175ºC
(1) The ramp was observed to yield reduced bondline voiding and increased strength
The above cure profiles are guideline recommendations. Cure conditions (time and temperature) may vary
based on customers’ experience and their application requirements, as well as customer curing equipment, oven
loading and actual oven temperatures.
PHYSIOCHEMICAL PROPERTIES
- Post Cure
Ionics
Chloride
Sodium
Potassium
Water Extract Conductivity
ABLEBOND 84-1LMISR4
Test Description
< 20 ppm
< 10 ppm
< 10 ppm
13 µmhos/cm
Teflon flask, 5 gm sample/20-40
mesh, 50 gm DI water, 100ºC for
24 hours
Conductometer
Test
Method
ATM-0007
ATM-0044
pH
6 pH meter
ATM-0002
Weight Loss @ 300ºC
0.35%
Thermogravimetric analysis
ATM-0073
The figures shown above are typical values only. If you need to write a specification, please request our current
Standard Release Specification.
07/05
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84-1LMISR4
84-1LMISR4
PHYSIOCHEMICAL PROPERTIES
- Post Cure
Glass Transition Temperature
ABLEBOND 84-1LMISR4
Test Description
120ºC
TMA penetration mode
Coefficient of Thermal Expansion
Below Tg
Above Tg
40 ppm/ºC
150 ppm/ºC
TMA expansion mode
Test
Method
ATM-0058
ATM-0055
Dynamic Tensile Modulus
Moisture Absorption @ Saturation
THERMAL/ELECTRICAL
PROPERTIES - Post Cure
Thermal Conductivity @ 121ºC
Volume Resistivity
MECHANICAL PROPERTIES -
Post Cure
Die Shear Strength @ 25ºC
Die Shear Strength (kgf/die) vs.
Temperature
@ -65ºC
@ 25ºC
@ 150ºC
@ 250ºC
4400 MPa (640,000 psi)
3900 MPa (570,000 psi)
2000 MPa (290,000 psi)
300 MPa (44,000 psi)
Dynamic
mechanical
thermal analysis
using < 0.5mm
thick sample
0.6%
Dynamic vapor sorption after 85ºC/
85% RH exposure
ABLEBOND 84-1LMISR4
Test Description
2.5 W/mK
0.0001 ohm-cm
C-MATIC conductance tester
4-point probe
ABLEBOND 84-1LMISR4
Test Description
19 kgf/die
@25ºC
21
11
27
@200ºC
2.9
2.6
2.4
2 x 2mm (80 x 80 mil) Si die on
Ag/Cu leadframe
@250ºC
1.7
1.4
2.0
Substrate
Ag/Cu LF
Bare Cu LF
Pd/Ni/Cu LF
3 x 3 mm
(120 x 120
mil) Si die
ATM-0112
ATM-0093
Test
Method
ATM-0017
ATM-0020
Test
Method
ATM-0052
ATM-0052
Die Shear Strength (kgf/die) after
85ºC/85% RH exposure for 168
hours
@25ºC
12
10
23
@200ºC
1.8
2.5
1.8
Substrate
Ag/Cu LF
Bare Cu LF
Pd/Ni/Cu LF
3 x 3 mm
(120 x 120 mil)
Si die
ATM-0052
Chip Warpage (µm) @ 25ºC vs.
Chip Size
Chip Size
7.6 mm (300 x 300 mil)
10.2 x 10.2 mm (400 x 400 mil)
12.7 x 12.7 mm (500 x 500 mil)
Warpage
19 µm
32 µm
51 µm
0.38mm (5 mil)
thick Si die on
0.2mm thick
Ag/Cu LF
ATM-0059
Chip Warpage (µm) vs. Post Cure
Thermal Process(2)
Substrate
Ag/Cu LF Bare Cu LF
Post Cure
+ Wirebond
(1 min @ 250ºC)
+ Post Mold Bake
(4 hrs @ 175ºC)
20 µm
29 µm
28 µm
22 µm
30 µm
28 µm
3 x 3 mm
(120 x 120 mil)
Si die
ATM-0059
Page 2 of 3




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