2SJ605 EFFECT TRANSISTOR Datasheet

2SJ605 Datasheet, PDF, Equivalent


Part Number

2SJ605

Description

MOS FIELD EFFECT TRANSISTOR

Manufacture

NEC

Total Page 8 Pages
Datasheet
Download 2SJ605 Datasheet


2SJ605
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ605
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ605 is P-channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 20 mMAX. (VGS = –10 V, ID = –33 A)
RDS(on)2 = 31 mMAX. (VGS = –4.0 V, ID = –33 A)
Low input capacitance
! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ605
TO-220AB
2SJ605-S
TO-262
2SJ605-ZJ
2SJ605-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
Gate to Source Voltage (VDS = 0 V)
VGSS
m 20
www.DataSheet4U.com Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
m 65
m 200
Total Power Dissipation (TC = 25°C)
PT 100
Total Power Dissipation (TA = 25°C)
PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS –45
EAS 203
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
Notes 1. PW 10 µs, Duty cycle 1%
! 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 , VGS = –20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14650EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
2000

2SJ605
2SJ605
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
! Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
! Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
! Body Diode Forward Voltage
! Reverse Recovery Time
! Reverse Recovery Charge
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = –60 V, VGS = 0 V
VGS = m 20 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –33 A
VGS = –10 V, ID = –33 A
VGS = –4.0 V, ID = –33 A
VDS = –10 V
VGS = 0 V
f = 1 MHz
VDD = –30 V, ID = –33 A
VGS = –10 V
RG = 0
VDD= –48 V
VGS = –10 V
ID = –65 A
IF = 65 A, VGS = 0 V
IF = 65 A, VGS = 0 V
di/dt = 100 A / µs
–10 µA
m 10 µA
–1.5 –2.0 –2.5 V
30 59
S
17 20 m
22 31 m
4600
pF
820 pF
330 pF
15 ns
14 ns
100 ns
58 ns
87 nC
15 nC
22 nC
1.0 V
53 ns
110 nC
www.DataSheet4U.com
TEST CIRCUIT 1 AVALANCHE CAPABILITY
! TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG
VGS = –20 V 0 V
50
L
VDD
IAS BVDSS
VDS
ID
VDD
Starting Tch
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS ()
VGS
Wave Form
10%
0
VDS ()
VDS
Wave Form
90%
VDS
0
td(on)
90%
10% 10%
90%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14650EJ2V0DS


Features DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS F ET INDUSTRIAL USE DESCRIPTION The 2SJ6 05 is P-channel MOS Field Effect Transi stor designed for high current switchin g applications. ORDERING INFORMATION P ART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2S J605-Z PACKAGE TO-220AB TO-262 TO-263 T O-220SMDNote FEATURES • Super low on -state resistance: RDS(on)1 = 20 mΩ M AX. (VGS = –10 V, ID = –33 A) RDS(o n)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance ! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A) • Built-in gate protection di ode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE M AXIMUM RATINGS (TA = 25°C) Drain to So urce Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) www.DataSheet4U.co m VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 m 20 m 65 m 200 V V A A W W °C °C A mJ (TO-262) Drain Current (DC) (TC = 25°C) Drain Current (pulse ) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel .
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