SILICON TRANSISTOR. 2SJ632 Datasheet


2SJ632 TRANSISTOR. Datasheet pdf. Equivalent


2SJ632


P CHANNEL MOS SILICON TRANSISTOR
Ordering number : ENN7420

2SJ632
P-Channel Silicon MOSFET

2SJ632
Ultrahigh-Speed Switching Applications
Features
• • •

Package Dimensions
unit : mm 2062A
[2SJ632]
4.5 1.6 1.5

Low ON-resistance. Ultrahigh-speed switching. 4V drive.

0.5 3 1.5 2 3.0
(Bottom view)

1

1.0

0.4

2.5 4.25max

0.4

0.75

1 : Gate 2 : Drain 3 : Source SANYO : PCP

Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature

Symbol VDSS VGSS ID IDP PD Tch Tstg

Conditions

Ratings -60 ±20 --2

Unit V V A A W W °C °C

PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C

--8 1.5 3.5 150 --55 to +150

Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-60V, VGS=0 VGS=±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--1A ID=--1A, VGS=-10V ID=--1A, VGS=-4V Ratings min --60 --1 ±10 -1.2 1.6 2.4 275 400 360 560 --2.6 typ max Unit V µA µA V S mΩ mΩ

Marking : GA

Continued on next page.

Any and all SANYO products described or contained herein do not ...



2SJ632
Ordering number : ENN7420
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
2SJ632
P-Channel Silicon MOSFET
2SJ632
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2062A
[2SJ632]
4.5
1.6
1.5
0.4 0.5
32
1.5
1
3.0
(Bottom view)
0.75
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : PCP
www.DataSheet4U.com
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (250mm2!0.8mm)
Tc=25°C
Ratings
--60
±20
--2
--8
1.5
3.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : GA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1A
ID=--1A, VGS=--10V
ID=--1A, VGS=--4V
min
--60
--1.2
1.6
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
2.4 S
275 360 m
400 560 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32603 TS IM TA-3954 No.7420-1/4

2SJ632
2SJ632
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
VDS=--30V, VGS=--10V, ID=--2A
IS=--2A, VGS=0
Switching Time Test Circuit
VDD= --30V
VIN
0V
--10V
PW=10µs
D.C.1%
VIN
G
ID= --1A
RL=30
D VOUT
P.G 50
2SJ632
S
Ratings
min typ max
Unit
365 pF
39 pF
30 pF
9 ns
24 ns
38 ns
38 ns
9 nC
1.7 nC
1.7 nC
--0.84
--1.2 V
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ID -- VDS
--4.0
--5.0V
--3.5
--3.0
--2.5 --3.5V
--2.0
--1.5
VGS= --3.0V
--1.0
--0.5
0
0
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS -- V IT05810
RDS(on) -- VGS
Tc=25°C
ID= --1A
--2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source Voltage, VGS -- V IT05812
--4.0
VDS= --10V
--3.5
ID -- VGS
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V IT05811
RDS(on) -- Tc
700
650
600
550
500
450
400
350
300
I
D=
--1A,
I D=
V GS= --4V
--1A, VGS=
--10V
250
200
150
100
--60 --40 --20 0
20 40 60 80 100 120 140
Case Temperature, Tc -- °C
IT05813
No.7420-2/4




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