2SJ646 Device Applications Datasheet

2SJ646 Datasheet, PDF, Equivalent


Part Number

2SJ646

Description

General Purpose Switching Device Applications

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SJ646 Datasheet


2SJ646
Ordering number : ENN8282
2SJ646
2SJ646
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
www.DataSheet4U.com Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--4A
ID=--4A, VGS=--10V
ID=--2A, VGS=--4.5V
ID=--2A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
Ratings
--30
±20
--8
--32
1
15
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
min
--30
--1.2
3.3
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
5.5 S
58 75 m
97 136 m
110 154 m
510 pF
115 pF
78 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA MS IM TA-100575 No.8282-1/4

2SJ646
Continued from preceding page.
Parameter
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
7518-004
6.5
5.0
4
2SJ646
Symbol
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--8A
VDS=--10V, VGS=--10V, ID=--8A
VDS=--10V, VGS=--10V, ID=--8A
IS=--8A, VGS=0V
Package Dimensions
unit : mm
7003-004
2.3
0.5
6.5
5.0
4
Ratings
min typ max
Unit
11 ns
40 ns
40 ns
30 ns
11 nC
2.4 nC
1.7 nC
--1.0 --1.2 V
2.3
0.5
0.85
0.7
0.6
123
www.DataSheet4U.com
2.3 2.3
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Switching Time Test Circuit
VIN
0V
--10V
PW=10µs
D.C.1%
VIN
G
VDD= --15V
ID= --4A
RL=3.75
D VOUT
P.G 50
2SJ646
S
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
No.8282-2/4


Features Ordering number : ENN8282 2SJ646 P-Cha nnel Silicon MOSFET 2SJ646 Features • • General-Purpose Switching De vice Applications Low ON-resistance. U ltrahigh-speed switching. 4V drive. Sp ecifications Absolute Maximum Ratings a t Ta=25°C Parameter Drain-to-Source Vo ltage Gate-to-Source Voltage Drain Curr ent (DC) Drain Current (Pulse) Allowabl e Power Dissipation www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --30 ±20 --8 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Tc=25°C --32 1 15 150 --55 to +150 Channel Temperature Storage T emperature Electrical Characteristics at Ta=25°C Parameter Drain-to-Source B reakdown Voltage Zero-Gate Voltage Drai n Current Gate-to-Source Leakage Curren t Cutoff Voltage Forward Transfer Admit tance Static Drain-to-Source On-State R esistance Input Capacitance Output Capa citance Reverse Transfer Capacitance Sy mbol V(BR)DSS IDSS IGSS VGS(off) yfs  RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-30V, .
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