2SJ667 Switching Device Datasheet

2SJ667 Datasheet, PDF, Equivalent


Part Number

2SJ667

Description

General-Purpose Switching Device

Manufacture

Sanyo Semicon Device

Total Page 4 Pages
Datasheet
Download 2SJ667 Datasheet


2SJ667
Ordering number : ENN8248
2SJ667
2SJ667
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=50µH, IAV=--42A
*2 L50µH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--100
±20
--42
--168
2.5
100
150
--55 to +150
58
--42
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : J667
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--100V, VGS=0
VGS= ±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--21A
ID=--21A, VGS=--10V
ID=--21A, VGS=--4V
min
--100
--1.2
22
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
37 S
42 56 m
52 74 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31005QA TS IM TB-00001248 No.8248-1/4

2SJ667
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2056A
2SJ667
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--50V, VGS=--10V, ID=--42A
VDS=--50V, VGS=--10V, ID=--42A
VDS=--50V, VGS=--10V, ID=--42A
IS=--42A, VGS=0
15.6 3.2
14.0
4.8
2.0
Ratings
min typ max
Unit
6350
pF
430 pF
250 pF
47 ns
360 ns
480 ns
220 ns
110 nC
20 nC
20 nC
--1.05
--1.2 V
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1.6
2.0
1.0
12
0.6
3
5.45 5.45
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PB
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --50V
ID= --21A
RL=2.38
D VOUT
2SJ667
P.G 50S
Avalanche Resistance Test Circuit
0V
--10V
50
RG
50
L
2SJ667
VDD
No.8248-2/4


Features Ordering number : ENN8248 2SJ667 P-Cha nnel Silicon MOSFET 2SJ667 Features • • • • General-Purpose Swit ching Device Applications Low ON-resis tance. Ultrahigh-speed switching. 4V dr ive. Motor drive, DC / DC converter. Av alanche resistance guarantee. Specific ations Absolute Maximum Ratings at Ta=2 5°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (D C) Drain Current (Pulse) www.DataSheet4 U.com Symbol VDSS VGSS ID IDP PD Tch T stg EAS IAV Conditions Ratings --100 ±20 --42 Unit V V A A W W °C °C mJ A PW≤10µs, duty cycle≤1% Tc=25°C --168 2.5 100 150 --55 to +150 58 --4 2 Allowable Power Dissipation Channel Temperature Storage Temperature Avalanc he Energy (Single Pulse) *1 Avalanche C urrent *2 Note : *1 VDD=30V, L=50µH, IAV=--42A *2 L≤50µH, Single pulse E lectrical Characteristics at Ta=25°C P arameter Drain-to-Source Breakdown Volt age Zero-Gate Voltage Drain Current Gat e-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-S.
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