AP2012P3C PHOTOTRANSISTOR Datasheet

AP2012P3C Datasheet, PDF, Equivalent


Part Number

AP2012P3C

Description

PHOTOTRANSISTOR

Manufacture

Kingbright Corporation

Total Page 4 Pages
Datasheet
Download AP2012P3C Datasheet


AP2012P3C
PHOTOTRANSISTOR
AP2012P3C
Features
MECHANICALLY AND SPECTRALLY MATCHED TO
THE AP2012 SERIES INFRARED EMITTING LED LAMP.
WATER CLEAR LENS.
PACKAGE : 2000PCS / REEL.
RoHS COMPLIANT.
Description
Made with NPN silicon phototransistor chips.
Package Dimensions
www.DataSheet4U.com
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3. Specifications are subject to change without notice.
SPEC NO: DSAF1594
APPROVED: J. Lu
REV NO: V.2
CHECKED: Allen Liu
DATE: MAR/29/2005
DRAWN: B.H.LI
PAGE: 1 OF 4
ERP:1203000140

AP2012P3C
Electrical / Optical Characteristics at TA=25°C
Symbol
Parameter
Min.
VBR CEO Collector-to-Emitter Breakdown Voltage
30
VBR ECO Emitter-to-Collector Breakdown Voltage
5
VCE (SAT) Collector-to-Emitter Saturation Voltage
-
I CEO Collector Dark Current
-
TR Rise Time (10to 90)
-
TF Fall Time (90to 10)
-
I (ON) On State Collector Current
2θ1/2 Viewing Angle
0.1
-
Typ.
-
-
-
-
3
3
Max.
-
-
0.8
100
-
-
0.3 -
120 -
Units
V
V
V
nA
us
us
mA
deg
Test Conditions
IC=100uA
Ee=0mW/cm2
IE=100uA
Ee=0mW/cm2
IC=2mA
Ee=20mW/cm2
VCE=10V
Ee=0mW/cm2
VCE = 5V
IC=1mA
RL=1000
VCE = 5V,
Ee=1mW/cm2,
λ=940nm
-
www.DataSheet4U.com
Absolute Maximum Ratings at TA=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Power Dissipation at (or below) 25°C Free Air Temperature
Operating Temperature Range
Storage Temperature Range
Max.Ratings
30V
5V
100mW
-40°C ~ +85°C
-40°C ~ +85°C
SPEC NO: DSAF1594
APPROVED: J. Lu
REV NO: V.2
CHECKED: Allen Liu
DATE: MAR/29/2005
DRAWN: B.H.LI
PAGE: 2 OF 4
ERP:1203000140


Features PHOTOTRANSISTOR AP2012P3C Features MEC HANICALLY AND SPECTRALLY MATCHED TO THE AP2012 SERIES INFRARED EMITTING LED LA MP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Description M ade with NPN silicon phototransistor ch ips. Package Dimensions www.DataSheet4 U.com Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004") unless otherwise noted. 3. Specifications are subject to change w ithout notice. SPEC NO: DSAF1594 APPRO VED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: MAR/29/2005 DRAWN: B.H.LI P AGE: 1 OF 4 ERP:1203000140 Electrical / Optical Characteristics at TA=25°C S ymbol VBR CEO Parameter Collector-to-Em itter Breakdown Voltage Min. 30 Typ. Ma x. Units V Test Conditions IC=100uA Ee= 0mW/cm2 IE=100uA Ee=0mW/cm2 IC=2mA Ee=2 0mW/cm2 VCE=10V Ee=0mW/cm2 VBR ECO Em itter-to-Collector Breakdown Voltage 5 - - V VCE (SAT) I CEO Collector-t o-Emitter Saturation Voltage Collector Dark Current - - 0.8 100 V nA TR Rise Time (10% to 90% ) Fa.
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