PLANAR TRANSISTOR. DMBTA44 Datasheet

DMBTA44 TRANSISTOR. Datasheet pdf. Equivalent

Part DMBTA44
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTA44 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DMBTA44
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBTA44
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
450
400
6
300
350
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 450
Collector-Emitter Breakdown Voltage
BVCEO 400
Emitter-Base Breakdown Volatge
BVEBO
6
Collector Cutoff Current
ICBO
ICES
-
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
Base-Emitter Saturation Voltage(1)
VCE(sat)3
VBE(sat)
-
-
hFE1
40
DC Current Gain(1)
hFE2
hFE3
50
45
hFE4
40
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max Unit
Test Conditions
- - V IC=100µA
- - V IC=1mA
- - V IE=10µA
- 100 nA VCB=400V
- 500 nA VCE=400V
- 100 nA VEB=4V
- 0.4 V IC=1mA, IB=0.1mA
- 0.5 V IC=10mA, IB=1mA
- 0.75 V IC=50mA, IB=5mA
- 0.75 V IC=10mA, IB=1mA
--
- IC=1mA, VCE=10V
- 300
- IC=10mA, VCE=10V
--
- IC=50mA, VCE=10V
--
- IC=100mA, VCE=10V
4 6 pF VCB=20V, f=1MHz







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