Power MOSFET. IRF7493PBF Datasheet

IRF7493PBF MOSFET. Datasheet pdf. Equivalent

Part IRF7493PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95289 IRF7493PbF HEXFET® Power MOSFET Applications High frequency DC-DC c.
Manufacture International Rectifier
Datasheet
Download IRF7493PBF Datasheet




IRF7493PBF
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PD - 95289
IRF7493PbF
Applications
l High frequency DC-DC converters
l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max Qg (typ.)
:80V 15m @VGS=10V 35nC
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
S
S
S
l Fully Characterized Avalanche Voltage G
and Current
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fMaximum Power Dissipation
fMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
RθJA
Junction-to-Lead
Junction-to-Ambient
Notes  through … are on page 9
Max.
80
± 20
9.3
7.4
74
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
50
Units
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1
09/21/04



IRF7493PBF
IRF7493PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
80 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C Reference to 25°C, ID = 1mA
eStatic Drain-to-Source On-Resistance ––– 11.5 15 mVGS = 10V, ID = 5.6A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 80V, VGS = 0V
––– ––– 250
VDS = 64V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance
13 –––
Qg Total Gate Charge
––– 35
Qgs Gate-to-Source Charge
––– 5.7
Qgd Gate-to-Drain Charge
––– 12
td(on)
Turn-On Delay Time
––– 8.3
tr Rise Time
––– 7.5
td(off)
Turn-Off Delay Time
––– 30
tf Fall Time
––– 12
Ciss Input Capacitance
––– 1510
Coss Output Capacitance
––– 320
Crss
Reverse Transfer Capacitance
––– 130
Coss Output Capacitance
––– 1130
Coss Output Capacitance
––– 210
Crss eff.
Effective Output Capacitance
––– 320
–––
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 15V, ID = 5.6A
ID = 5.6A
VDS = 40V
VGS = 10V
eVDD = 40V,
ID = 5.6A
ns RG = 6.2
VGS = 10V
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
gVGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
Typ.
–––
–––
Max.
180
5.6
Units
mJ
A
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– 9.3
MOSFET symbol
––– ––– 74
A showing the
integral reverse
––– ––– 1.3
p-n junction diode.
eV TJ = 25°C, IS = 5.6A, VGS = 0V
e––– 37 56 ns TJ = 25°C, IF = 5.6A, VDD = 15V
––– 52 78 nC di/dt = 100A/µs
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