Power MOSFET. IRF9953PBF Datasheet

IRF9953PBF MOSFET. Datasheet pdf. Equivalent

Part IRF9953PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual.
Manufacture International Rectifier
Datasheet
Download IRF9953PBF Datasheet




IRF9953PBF
www.DataSheet4U.com
PD - 95477
IRF9953PbF
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS = -30V
RDS(on) = 0.25
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
-30
± 20
-2.3
-1.8
-10
1.6
2.0
1.3
57
Avalanche Current
IAR -1.3
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtƒ
EAR
dv/dt
0.20
-5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
RθJA
Limit
62.5
Units
°C/W
7/16/04



IRF9953PBF
IRF9953PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.165 0.250
––– 0.290 0.400
VGS = 10V, ID = -1.0A „
VGS = 4.5V, ID = -0.50A „
VGS(th)
Gate Threshold Voltage
-1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
––– -2.4 ––– S VDS = -15V, ID = -2.3A
IDSS Drain-to-Source Leakage Current
––– ––– -2.0
––– ––– -25
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = -20V
––– ––– -100
VGS = 20V
Qg Total Gate Charge
––– 6.1 12
ID = -2.3A
Qgs Gate-to-Source Charge
––– 1.7 3.4 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge
––– 1.1 2.2
VGS = -10V, See Fig. 10 „
td(on)
Turn-On Delay Time
––– 9.7 19
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 14 28
––– 20 40
ns ID = -1.0A
RG = 6.0
tf Fall Time
––– 6.9 14
RD = 10„
Ciss Input Capacitance
––– 190 –––
VGS = 0V
Coss Output Capacitance
––– 120 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 61 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.82
27
31
Max.
1.3
16
1.2
54
62
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
TJ = 25°C, IF = -1.25A
di/dt = -100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 67mH
RG = 25, IAS = -1.3A.
… Surface mounted on FR-4 board, t 10sec.
ƒ ISD -1.3A, di/dt -92A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.







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