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IRGSL6B60KD

INSULATED GATE BIPOLAR TRANSISTOR

Description

www.DataSheet4U.com PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.0A, TC=100°C Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positiv...

International Rectifier

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