AUTOMOTIVE MOSFET. IRF1405ZS Datasheet

IRF1405ZS MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF1405ZS
www.DataSheet4U.com
PD - 94645A
IRF1405Z
AUTOMOTIVE MOSFET
IRF1405ZS
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
IRF1405ZL
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 4.9m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
TO-220AB
IRF1405Z
S ID = 75A
D2Pak
IRF1405ZS
TO-262
IRF1405ZL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
iJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
150
110
75
600
230
1.5
± 20
270
420
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/29/03


IRF1405ZS Datasheet
Recommendation IRF1405ZS Datasheet
Part IRF1405ZS
Description AUTOMOTIVE MOSFET
Feature IRF1405ZS; www.DataSheet4U.com PD - 94645A AUTOMOTIVE MOSFET IRF1405Z IRF1405ZS IRF1405ZL HEXFET® Power MOSF.
Manufacture International Rectifier
Datasheet
Download IRF1405ZS Datasheet




International Rectifier IRF1405ZS
IRF1405Z/S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 ––– –––
––– 0.049 –––
––– 3.7 4.9
V VGS = 0V, ID = 250µA
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
88 ––– ––– S VDS = 25V, ID = 75A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 120 180
ID = 75A
Qgs Gate-to-Source Charge
––– 31 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 46 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 25V
tr Rise Time
––– 110 –––
ID = 75A
td(off)
tf
LD
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
e––– 48 ––– ns RG = 4.4
––– 82 –––
VGS = 10V
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 4780 –––
––– 770 –––
––– 410 –––
––– 2730 –––
––– 600 –––
––– 910 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 600
A showing the
integral reverse
G
––– ––– 1.3
––– 30 46
––– 30 45
ep-n junction diode.
S
V TJ = 25°C, IS = 75A, VGS = 0V
ens TJ = 25°C, IF = 75A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.10mH
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
† This value determined from sample failure population.
RG = 25, IAS = 75A, VGS =10V. Part not
100% tested to this value in production.
recommended for use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the same
‡ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
charging time as Coss while VDS is rising from 0 to 80%
VDSS .
2 www.irf.com



International Rectifier IRF1405ZS
IRF1405Z/S/L
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10 4.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 150°C
TJ = 25°C
10
VDS = 25V
20µs PULSE WIDTH
1
4 6 8 10 12
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
200
175
150
TJ = 25°C
125
100
TJ = 175°C
75
50
25
0
0 25 50 75 100 125 150 175 200
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
vs. Drain Current
3





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