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POWER MOSFET. GJ08P10 Datasheet

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POWER MOSFET. GJ08P10 Datasheet







GJ08P10 MOSFET. Datasheet pdf. Equivalent




GJ08P10 MOSFET. Datasheet pdf. Equivalent





Part

GJ08P10

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GJ08P10 Datasheet


GTM GJ08P10

GJ08P10; www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2006/02/21 REVISED DA TE : GJ08P10 P-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A Description The GJ08P10 pro vide the designer with the best combina tion of fast switching, ruggedized devi ce design, low on-resistance and cost-e ffectiveness. The TO-252 package is uni versally preferred.


GTM GJ08P10

for all commercial-industrial surface m ount applications. *Simple Drive Requir ement *Lower On-resistance *Fast Switch ing Characteristic *RoHS Compliant Fea tures Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6. 40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2 .30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0. 70 2.20 2.40 0.45 .


GTM GJ08P10

0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.2 0 Absolute Maximum Ratings Parameter D rain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Cont inuous Drain Current, VGS@10V Pulsed Dr ain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings -1 00 ±32 -8 -6 -32 45 0.36 100 -8 -55 ~ +150 Unit V V A A A W W/ mJ A Total P ower Dissipation Li.



Part

GJ08P10

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Datasheet
Download GJ08P10 Datasheet




 GJ08P10
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/02/21
REVISED DATE :
GJ08P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-100V
200m
-8A
Description
The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS@10V
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-100
±32
-8
-6
-32
45
0.36
100
-8
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
2.8
110
Unit
/W
/W
GJ08P10
Page: 1/4





 GJ08P10
ISSUED DATE :2006/02/21
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-100
-
-1.0
-
-
-
-0.096
-
8
-
-
-
-3.0
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-6A
nA VGS= ±32V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -1 uA VDS=-100V, VGS=0
- -25 uA VDS=-80V, VGS=0
Static Drain-Source On-Resistance3 RDS(ON)
-
-
- 200 m VGS=-10V, ID=-6A
- 250
VGS=-4.5V, ID=-4A
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 16 25.6
ID=-6A
Qgs - 4.4 - nC VDS=-80V
Qgd - 8.7 -
VGS=-4.5V
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
9
-
VDS=-50V
Tr
Td(off)
-
-
14
45
-
-
ID=-6A
ns VGS=-10V
RG=3.3
Tf - 40 -
RD=6.25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1590 2550
VGS=0V
- 110 -
pF VDS=-25V
- 70 -
f=1.0MHz
Gate Resistance
Rg - 8 12
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
49
11
Max.
-1.7
-
-
Unit Test Conditions
V IS=-8A, VGS=0V
ns IS=-6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=-50V, L=13mH, RG=25 , IAS=-3.9A.
3. Pulse width 300us, duty cycle 2%.
GJ08P10
Page: 2/4





 GJ08P10
Characteristics Curve
C
ISSUED DATE :2006/02/21
REVISED DATE :
C
Fig 1. Typical Output Characteristics
-6
Fig 2. Typical Output Characteristics
-8
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ08P10
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4



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