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GJ08P10

GTM

P-CHANNEL ENHANCEMENT MODE POWER MOSFET


Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A Description The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally...



GTM

GJ08P10

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