DatasheetsPDF.com

N-Channel MOSFET. 2SK3230B Datasheet

DatasheetsPDF.com

N-Channel MOSFET. 2SK3230B Datasheet






2SK3230B MOSFET. Datasheet pdf. Equivalent




2SK3230B MOSFET. Datasheet pdf. Equivalent





Part

2SK3230B

Description

N-Channel MOSFET



Feature


DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-C HANNEL SILICON JUNCTION FIELD EFFECT TR ANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230B is suitable for converter of ECM. General-purpose p roduct. PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1–0.05 +0.1 • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • E.
Manufacture

NEC

Datasheet
Download 2SK3230B Datasheet


NEC 2SK3230B

2SK3230B; specially suitable for audio and telepho ne • Small package: SC-89 (TUSM) 1.6 ±0.1 0.8 ±0.1 FEATURES 3 2 1 0 .5 0.5 1.6 ±0.1 ORDERING INFORMATIO N PART NUMBER 2SK3230B PACKAGE SC-89 (T USM) 0.5 ±0.05 0.2 +0.1 –0 ABSOLU TE MAXIMUM RATINGS (TA = 25°C) Drain t o Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Cur rent Total Power Dissipation .


NEC 2SK3230B

Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C EQUIVALENT CIRCUIT 2 3 1 1: S ource 2: Drain 3: Gate Caution Please take care of ESD (Electro Static Discha rge) when you handle the device in this document. The information in this doc ument is subject to change without noti ce. Before using this do.


NEC 2SK3230B

cument, please confirm that this is the latest version. Not all products and/o r types are available in every country. Please check with an NEC Electronics s ales representative for availability an d additional information. Document No. D17283EJ1V0DS00 (1st edition) Date Publ ished August 2004 NS CP(K) Printed in J apan 2004 2SK3230B ELECTRICAL CHARACT ERISTICS (TA = 25°.

Part

2SK3230B

Description

N-Channel MOSFET



Feature


DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-C HANNEL SILICON JUNCTION FIELD EFFECT TR ANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230B is suitable for converter of ECM. General-purpose p roduct. PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1–0.05 +0.1 • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • E.
Manufacture

NEC

Datasheet
Download 2SK3230B Datasheet




 2SK3230B
www.DataSheet4U.com
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3230B
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3230B is suitable for converter of ECM.
General-purpose product.
PACKAGE DRAWING (Unit: mm)
0.3 ±0.05
0.1+–00..015
FEATURES
Low noise:
108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k)
Especially suitable for audio and telephone
Small package:
SC-89 (TUSM)
3
21
0.5 0.5
1.6 ±0.1
ORDERING INFORMATION
PART NUMBER
2SK3230B
PACKAGE
SC-89 (TUSM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 1.0 V)
VDSX
20
Gate to Drain Voltage
VGDO
20
Drain Current
ID 10
Gate Current
IG 10
Total Power Dissipation
PT 100
Junction Temperature
Tj 125
Storage Temperature
Tstg 55 to +125
V
V
mA
mA
mW
°C
°C
0.2
+0.1
–0
EQUIVALENT CIRCUIT
2
3
1: Source
2: Drain
3: Gate
1
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17283EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004




 2SK3230B
2SK3230B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
Forward Transfer Admittance
IDSS
VGS(off)
| yfs1 |
VDS = 2.0 V, VGS = 0 V
VDS = 2.0 V, ID = 1.0 µA
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz
Input Capacitance
Voltage Gain
| yfs2 |
Ciss
GV
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
VDD = 2.0 V, C = 5 pF, RL = 2.2 k,
Noise Voltage
VIN = 10 mV, f = 1 kHz
NV VDD = 2.0 V, C = 5 pF, RL = 2.2 k,
A-curve
MIN.
90
300
750
TYP.
200
0.37
480
1300
4.0
1.0
MAX.
430
1.0
UNIT
µA
V
µS
µS
pF
dB
108.5
dB
IDSS CLASSIFICATION
MARKING
CE
IDSS (µA)
90 to 180
CF
150 to 240
CH
210 to 350
CJ
320 to 430
VOLTAGE GAIN TEST CIRCUIT
VDD
RL
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2 Data Sheet D17283EJ1V0DS




 2SK3230B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
20
10
0.8 0.6 0.4 0.2
0 0.2 0.4 0.6 0.8
10
20
30
40
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
VGS = 0 V
f = 1.0 MHz
2SK3230B
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
800
0.2 V
0.3 V
600
400
200
VGS = 0.2 V
0.1 V
0V
0.1 V
0
0 2 4 6 8 10
VDS - Drain to Source Voltage - V
1600
1400
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS = 2.0 V
1200
1000
800
600
400
200
0
-0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8
VGS - Gate to Source Voltage - V
1
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
10
VDS = 2.0 V
| yfs |
1
VGS(off)
1
1 10 100
VDS - Drain to Source Voltage - V
0.1
10
100 1000
IDSS - Zero Gate Voltage Drain Current - µA
Data Sheet D17283EJ1V0DS
3






Recommended third-party 2SK3230B Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)