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2SK3233

Hitachi Semiconductor
Part Number 2SK3233
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st. Edition Mar. 2001 Features • • • • •...
Datasheet PDF File 2SK3233 PDF File

2SK3233
2SK3233

Overview
2SK3233 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1369 (Z) 1st.
Edition Mar.
2001 Features • • • • • Low on-resistance: R DS(on) = 1.
1 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.
5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO–220CFM D G 1 2 3 1.
Gate 2.
Drain 3.
Source S 2SK3233 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation C...


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