Controlled Rectifier. C106D Datasheet

C106D Rectifier. Datasheet pdf. Equivalent

Part C106D
Description Silicon Controlled Rectifier
Feature www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon C.
Manufacture Motorola
Datasheet
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C106D
MOTOROLA
www.DSatEaSMhIeCetO4UN.cDoUmCTOR TECHNICAL DATA
Silicon Controlled Rectifier
Reverse Blocking Triode Thyristors
. . . Glassivated PNPN devices designed for high volume consumer applications such
as temperature, light, and speed control; process and remote control, and warning
systems where reliability of operation is important.
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document
by C106/D
C106
Series *
*Motorola preferred devices
SCRs
4 AMPERES RMS
50 thru 600 VOLTS
G
AK
A
G
AK
CASE 77-08
(TO-225AA)
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(RGK = 1 k)
(TC = –40° to 110°C)
C106F
C106A
C106B
C106D
C106M
Symbol
VDRM
or
VRRM
Value
50
100
200
400
600
Unit
Volts
RMS Forward Current
(All Conduction Angles)
IT(RMS)
4
Amps
Average Forward Current
(TA = 30°C)
IT(AV) 2.55 Amps
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to +110°C)
Circuit Fusing (t = 8.3 ms)
ITSM 20 Amps
I2t 1.65 A2s
Peak Gate Power
PGM 0.5 Watt
Average Gate Power
PG(AV)
0.1
Watt
Peak Forward Gate Current
IGFM
0.2
Amp
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1



C106D
C106 Series
MAXIMUM RATINGS — continued
Rating
Symbol
Value
Unit
Peak Reverse Gate Voltage
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque(1)
VGRM
TJ
Tstg
6
–40 to +110
–40 to +150
6
Volts
°C
°C
in. lb.
1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum
results, an activated flux (oxide removing) is recommended.
THERMAL CHARACTERISTICS (TC = 25°C, RGK = 1 kunless otherwise noted.)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC 3 °C/W
RθJA 75 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C
TJ = 110°C
Forward “On” Voltage
(IFM = 1 A Peak)
Gate Trigger Current (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms)
(VAK = 6 Vdc, RL = 100 Ohms, TC = –40°C)
Gate Trigger Voltage (Continuous dc)
(VAK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms)
(VAK = Rated VDRM, RL = 3000 Ohms,
RGK = 1000 Ohms, TJ = 110°C)
TJ = 25°C
TJ = –40°C
Holding Current
(VD = 12 Vdc, RGK = 1000 Ohms)
TJ = 25°C
TJ = –40°C
TJ = +110°C
Forward Voltage Application Rate
(TJ = 110°C, RGK = 1000 Ohms, VD = Rated VDRM)
Turn-On Time
Turn-Off Time
IDRM, IRRM
VTM
IGT
VGT
IHX
dv/dt
tgt
tq
——
——
——
— 30
— 75
0.4 —
0.5 —
0.2 —
0.3 —
0.4 —
0.14 —
—8
— 1.2
— 40
10 µA
100 µA
2.2 Volts
µA
200
500
Volts
0.8
1
3 mA
6
2
— V/µs
µs
µs
FIGURE 1 – AVERAGE CURRENT DERATING
110
100
90
DC
80
70
60
50
HALF SINE WAVE
40 RESISTIVE OR INDUCTIVE LOAD.
30 50 to 400 Hz
20
10
0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
2
FIGURE 2 – MAXIMUM ON-STATE POWER DISSIPATION
10
JUNCTION TEMPERATURE 110°C
8
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
6 50 TO 400Hz.
DC
4
2
0
0 .4 .8 1.2 1.6 2.0 2.4 2.6 3.2 3.6 4.0
IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)
Motorola Thyristor Device Data





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