DatasheetsPDF.com

POWER MOSFET. GSC4424 Datasheet

DatasheetsPDF.com

POWER MOSFET. GSC4424 Datasheet






GSC4424 MOSFET. Datasheet pdf. Equivalent




GSC4424 MOSFET. Datasheet pdf. Equivalent





Part

GSC4424

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/01 REVISED DA TE :2005/09/30B GSC4424 N-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID 30V 9m 13.8A The GSC4424 provide the designer with the best combination of fast switching, ruggedized device d esign, low on-resistance and cost-effec tiveness. The SOP-8 package is universa lly preferred for .
Manufacture

GTM

Datasheet
Download GSC4424 Datasheet


GTM GSC4424

GSC4424; all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low On-resi stance *Fast Switching Characteristic Description Features Package Dimensio ns REF. A B C D E F Millimeter Min. M ax. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.0 0 4.00 8 0.90 0.25 REF. M H L J K G M illimeter Min. Max.


GTM GSC4424

. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 RE F. 45 1.27 TYP. Absolute Maximum Ratin gs Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Rati ngs 30 20 13.8 11 50 2.5 0.02 -55 ~ +15 0 Unit V V A A A W W/ Total Power Dis sipation Linear De.


GTM GSC4424

rating Factor Operating Junction and Sto rage Temperature Range Thermal Data Pa rameter Thermal Resistance Junction-amb ient 3 Symbol Max. Rthj-amb Value 50 Unit /W GSC4424 Page: 1/4 ISSUED DA TE :2005/03/01 REVISED DATE :2005/09/30 B Electrical Characteristics(Tj = 25 P arameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coeffici ent Unless otherw.

Part

GSC4424

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/01 REVISED DA TE :2005/09/30B GSC4424 N-CHANNEL ENHA NCEMENT MODE POWER MOSFET BVDSS RDS(ON ) ID 30V 9m 13.8A The GSC4424 provide the designer with the best combination of fast switching, ruggedized device d esign, low on-resistance and cost-effec tiveness. The SOP-8 package is universa lly preferred for .
Manufacture

GTM

Datasheet
Download GSC4424 Datasheet




 GSC4424
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
GSC4424
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
9m
13.8A
Description
The GSC4424 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
30
20
13.8
11
50
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC4424
Page: 1/4




 GSC4424
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.02
-
21
-
- V VGS=0, ID=250uA
- V/ Reference to 25 , ID=1mA
3.0 V VDS=VGS, ID=250uA
- S VDS=10V, ID=13A
100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 9 m VGS=10V, ID=13A
- 14
VGS=4.5V, ID=10A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 23 35
ID=13A
Qgs - 6 - nC VDS=24V
Qgd - 15 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 13 -
VDS=25V
Tr
Td(off)
-
-
9
35
-
-
ID=1A
ns VGS=10V
RG=3.3
Tf - 17 -
RD=15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1920 3070
VGS=0V
- 410 -
pF VDS=25V
- 300 -
f=1.0MHz
Gate Resistance
Rg - 0.9 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
33
26
Max.
1.2
-
-
Unit Test Conditions
V IS=2.1A, VGS=0V
ns IS=13A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125
/W when mounted on Min. copper pad.
GSC4424
Page: 2/4




 GSC4424
Characteristics Curve
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GSC4424
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






Recommended third-party GSC4424 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)