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SIGC04T60G Datasheet, Equivalent, IGBT.IGBT IGBT |
 
 
 
Part | SIGC04T60G |
---|---|
Description | IGBT |
Feature | www. DataSheet4U. com SIGC04T60G IGBT Chi p FEATURES: • 600V Trench & Field Sto p technology • low VCE(sat) • low t urn-off losses • short tail current â €¢ positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete comp onents Applications: • drives • whi te goods • resonant applications C G E Chip Type SIGC04T60G VCE 600V I Cn 6A Die Size 1. 89 x 2. 17 mm2 Packag e sawn on foil Ordering Code Q67050A43 46-A101 MECHANICAL PARAMETER: Raster s ize Emitter pad size Gate pad size Area total / active Thickness Wafer size Fl at position Max. possible chips per . |
Manufacture | Infineon Technologies |
Datasheet |
Part | SIGC04T60G |
---|---|
Description | IGBT |
Feature | www. DataSheet4U. com SIGC04T60G IGBT Chi p FEATURES: • 600V Trench & Field Sto p technology • low VCE(sat) • low t urn-off losses • short tail current â €¢ positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete comp onents Applications: • drives • whi te goods • resonant applications C G E Chip Type SIGC04T60G VCE 600V I Cn 6A Die Size 1. 89 x 2. 17 mm2 Packag e sawn on foil Ordering Code Q67050A43 46-A101 MECHANICAL PARAMETER: Raster s ize Emitter pad size Gate pad size Area total / active Thickness Wafer size Fl at position Max. possible chips per . |
Manufacture | Infineon Technologies |
Datasheet |
 
 
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