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LNA2901L
GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0 ø5.0±0.2 Tr...
Panasonic Semiconductor
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