Infrared Light Emitting Diodes
LNA2W01L
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 4.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.)
1.05±0.1 1
0.5±0.1
Type number : Cathode mark (...
