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ISSUED DATE :2005/09/05 REVISED DATE :
GESD1060
Description Features
NPN EPITAXIAL PLANAR T RANSISTOR
The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,
Package Dimensions
REF. A b c...
