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RQA0009TXDQS
Silicon N-Channel MOS FET
REJ03G1520-0100 Rev.1.00 Jul 04, 2007
Features
High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)
Outline
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