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DFB50N06
N-Channel MOSFET
Description
www.DataSheet4U.com DFB50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 50A General Description This N-channel enhancement mode field-effect power
transistor
using DI semiconduct...
DnI
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DFB50N06
N-Channel MOSFET
- DnI
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