IRFR9214PBF MOSFET Datasheet

IRFR9214PBF Datasheet, PDF, Equivalent


Part Number

IRFR9214PBF

Description

HEXFET POWER MOSFET

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRFR9214PBF Datasheet


IRFR9214PBF
www.DataSheet4U.com
l P-Channel
l Surface Mount (IRFR9214)
l Straight Lead (IRFU9214)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
PD - 95375A
IRFR/U9214PbF
HEXFET® Power MOSFET
D
VDSS = -250V
RDS(on) = 3.0
ID = -2.7A
S
D-Pak
TO-252AA
I-Pak
TO-251AA
Max.
-2.7
-1.7
-11
50
0.40
± 20
100
-2.7
5.0
-5.0
-55 to + 150
260 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
–––
Max.
2.5
50
110
Units
°C/W
12/07/04

IRFR9214PBF
www.DataSheet4U.com
IRFR/U9214PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-250 ––– ––– V VGS = 0V, ID = -250µA
––– -0.25 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 3.0 VGS = -10V, ID = -1.7A „
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
0.9 ––– ––– S VDS = -50V, ID = -1.7A
––– ––– -100 µA VDS = -250V, VGS = 0V
––– ––– -500
VDS = -200V, VGS = 0V, TJ = 150°C
––– ––– 100 n A VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 14
ID = -1.7A
––– ––– 3.1 nC VDS = -200V
––– ––– 6.8
VGS = -10V, See Fig. 6 and 13 „
––– 11 –––
VDD = -125V
–––
–––
14 –––
20 –––
ns
ID = -1.7A
RG =21
––– 17 –––
RD =70 See Fig. 10 „
––– 4.5 –––
––– 7.5 –––
Between lead,
nH
6mm (0.25in.)
from package
G
and center of die contact…
D
S
––– 220 –––
VGS = 0V
––– 75 ––– pF VDS = -25V
––– 11 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -2.7
A
MOSFET symbol
showing the
integral reverse
––– ––– -11
p-n junction diode.
G
D
S
––– ––– -5.8 V TJ = 25°C, IS = -2.7A, VGS = 0V „
––– 150 220 ns TJ = 25°C, IF = -1.7A
––– 870 1300 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 27mH
RG = 25, IAS = -2.7A. (See Figure 12)
ƒ ISD -2.7A, di/dt 600A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994


Features www.DataSheet4U.com PD - 95375A IRFR/U 9214PbF P-Channel Surface Mount (IRFR92 14) l Straight Lead (IRFU9214) l Advanc ed Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Des cription l l HEXFET® Power MOSFET VDS S = -250V RDS(on) = 3.0Ω D G S ID = -2.7A Third Generation HEXFETs from International Rectifier utilize advance d processing techniques to achieve low on-resistance per silicon area. This be nefit, combined with the fast switching speed and ruggedized device design tha t HEXFET Power MOSFETs are well known f or, provides the designer with an extre mely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mount ing using vapor phase, infrared, or wav e soldering techniques. The straight le ad version (IRFU series) is for through -hole mounting applications. Power diss ipation levels up to 1.5 watts are poss ible in typical surface mount applicati ons. D-Pak TO-252AA I-Pak TO-251AA Absolute Maximum Ratings Param.
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