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TSM1N60

Part Number	TSM1N60
Manufacturer	Taiwan Semiconductor
Description	N-Channel Power Enhancement Mode MOSFET
Published	Feb 22, 2008
Detailed Description	com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 6...
Datasheet	TSM1N60 PDF File

Overview

com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1.
Gate 2.
Drain 3.
Source VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.
6A = 8Ω General Description The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridg...

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