Power Transistors. 3DD207 Datasheet

3DD207 Transistors. Datasheet pdf. Equivalent

Part 3DD207
Description Silicon NPN Power Transistors
Feature www.DataSheet4U.com Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3.
Manufacture Inchange Semiconductor
Datasheet
Download 3DD207 Datasheet



3DD207
www.DataSheet4U.com
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
3DD207
DESCRIPTION
With TO-3 package
Low collector saturation voltage
APPLICATIONS
For audio amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
固IN电C半H导AN体GE SEMICONDUCTORSYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
60
60
6
UNIT
V
V
V
IC Collector current
5A
PC Collector power dissipation
TC=75
50 W
Tj Junction temperature
150
Tstg Storage temperature
-55~150



3DD207
www.DataSheet4U.com
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
3DD207
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
60 V
V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0
60 V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
6V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
1.0 V
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.3A
1.5 V
ICBO Collector cut-off current
VCB=60V; IE=0
0.5 mA
IEBO Emitter cut-off current
VEB=6V; IC=0
0.1 mA
固IN电C半H导AN体GE SEMICONDUCTORhFE DC current gain
IC=2A ; VCE=5V
40 250
2





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