POWER MOSFET. AP4500GM Datasheet

AP4500GM MOSFET. Datasheet pdf. Equivalent

AP4500GM Datasheet
Recommendation AP4500GM Datasheet
Part AP4500GM
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4500GM; Advanced Power Electronics Corp. AP4500GM RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE P.
Manufacture Advanced Power Electronics
Datasheet
Download AP4500GM Datasheet




Advanced Power Electronics AP4500GM
Advanced Power
Electronics Corp.
AP4500GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20 -20
+12 +12
6 -5
4.8 -4
20 -20
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201208066



Advanced Power Electronics AP4500GM
AP4500GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current
VDS=20V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VGS=+12V, VDS=0V
ID=6A
VDS=16V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3,VGS=5V
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- - 30 mΩ
- - 45 mΩ
0.5 - 1.2 V
-6-S
- - 1 uA
- - 25 uA
- - +100 nA
- 10 15 nC
- 1.1 - nC
- 4.1 - nC
- 7 - ns
- 10 - ns
- 21 - ns
- 5 - ns
- 570 910 pF
- 90 - pF
- 85 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 21 - ns
- 14 - nC
2



Advanced Power Electronics AP4500GM
AP4500GM
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-2.2A
-20 -
--
-
50
VGS=-2.5V, ID=-1.8A
- - 90
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5 -
-1
gfs
Forward Transconductance
VDS=-10V, ID=-2.2A
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V
IGSS Gate-Source Leakage
VGS=+12V, VDS=0V
Qg Total Gate Charge2
ID=-5A
- 2.2 -
- - -1
- - -25
- - +100
- 13 20
Qgs Gate-Source Charge
VDS=-16V
- 1.5 -
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-10V
- 4.5 -
-8-
tr Rise Time
ID=-1A
- 17 -
td(off)
Turn-off Delay Time
RG=3.3,VGS=-5V
- 24 -
tf Fall Time
RD=10
- 36 -
Ciss Input Capacitance
VGS=0V
- 920 1500
Coss Output Capacitance
VDS=-20V
- 90 -
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 85 -
Units
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-1.8A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max.
- - -1.2
- 28 -
- 16 -
30
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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