AP4500GM POWER MOSFET Datasheet

AP4500GM Datasheet, PDF, Equivalent


Part Number

AP4500GM

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 7 Pages
Datasheet
Download AP4500GM Datasheet


AP4500GM
Advanced Power
Electronics Corp.
AP4500GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching Performance
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
20V
30mΩ
6A
-20V
50mΩ
-5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20 -20
+12 +12
6 -5
4.8 -4
20 -20
2.0
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201208066

AP4500GM
AP4500GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current
VDS=20V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VGS=+12V, VDS=0V
ID=6A
VDS=16V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3,VGS=5V
RD=10
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- - 30 mΩ
- - 45 mΩ
0.5 - 1.2 V
-6-S
- - 1 uA
- - 25 uA
- - +100 nA
- 10 15 nC
- 1.1 - nC
- 4.1 - nC
- 7 - ns
- 10 - ns
- 21 - ns
- 5 - ns
- 570 910 pF
- 90 - pF
- 85 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 21 - ns
- 14 - nC
2


Features Advanced Power Electronics Corp. AP4500 GM RoHS-compliant Product N AND P-CHANN EL ENHANCEMENT MODE POWER MOSFET ▼ S imple Drive Requirement ▼ Low Gate Ch arge ▼ Fast Switching Performance D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Descripti on Advanced Power MOSFETs from APEC pr ovide the designer with the best combin ation of fast switching, ruggedized dev ice design, low on-resistance and cost- effectiveness. N-CH P-CH BVDSS RDS(ON ) ID BVDSS RDS(ON) ID D1 The SO-8 pac kage is widely preferred for commercial -industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 G2 S1 20V 30mΩ 6A -20V 50mΩ -5A D2 S2 Abs olute Maximum Ratings Symbol Paramete r VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pul sed Drain Current1 Total Power Dissipat ion Linear Derating Factor Storage Temp erature Range Operating Junction Temperature Range Rating N-channel P-channe.
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