SSM9435GM. 9435GM Datasheet

9435GM SSM9435GM. Datasheet pdf. Equivalent

9435GM Datasheet
Recommendation 9435GM Datasheet
Part 9435GM
Description SSM9435GM
Feature 9435GM; SSM9435GM P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The.
Manufacture SSM
Datasheet
Download 9435GM Datasheet





SSM 9435GM
SSM9435GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
-30V
50m
-5.3A
Pb-free; RoHS-compliant SO-8
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D
D
D
D
SO-8
G
S
SS
DESCRIPTION
The SSM9435GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as battery
management and general high-side switch circuits.
The SSM9435GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C
Linear derating factor
Value
-30
±20
-5.3
-4.7
-20
2.5
0.02
Units
V
V
A
A
A
W
W/°C
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
-55 to 150
-55 to 150
°C
°C
Value
50
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
2/12/2006 Rev.3.01
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SSM 9435GM
SSM9435GM
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
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IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance2
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS=0V, ID=-250uA
Reference to 25°C, ID=-1mA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-5.3A
VDS=-30V, VGS=0V
VDS=-24V ,VGS=0V, Tj = 70°C
VGS=±20V
ID=-5.3A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=6, VGS=-10V
RD=15
VGS=0V
VDS=-15V
f=1.0MHz
Min. Typ. Max. Units
-30 - - V
- -0.04 - V/°C
- - 50 m
- - 90 m
-1 - -3 V
- 10 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 9 15 nC
- 3 - nC
- 5 - nC
- 11 - ns
- 8 - ns
- 25 - ns
- 17 - ns
- 507 810 pF
- 222 - pF
- 158 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward voltage 2
Reverse-recovery time
Reverse-recovery charge
Test Conditions
IS=-2.6A, VGS=0V
IS=-5.3A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 29 - ns
- 20 - nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
2/12/2006 Rev.3.01
www.SiliconStandard.com
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SSM 9435GM
30
-10V
T A =25 o C
-8.0V
25
-6.0V
20 -4.5V
15
V G =-4.0V
10
5
0
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12345
-V DS , Drain-to-Source Voltage (V)
6
Fig 1. Typical Output Characteristics
SSM9435GM
30
-10V
25
T A =150 o C
-8.0V
-6.0V
20 -4.5V
15
V G =-4.0V
10
5
0
0123456
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
80 1.6
I D =-4.2A
I D =-5.3A
70
T A =25°C
1.4 V G = -10V
60 1.2
50 1
40 0.8
30
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
12
Fig 3. On-Resistance vs. Gate Voltage
10
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3.0
8
6
T j =150 o C
4
2
T j =25 o C
2.5
2.0
1.5
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
1.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
2/12/2006 Rev.3.01
www.SiliconStandard.com
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