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K1835

Part Number	K1835
Manufacturer	Hitachi Semiconductor
Description	2SK1835
Published	Jun 27, 2008
Detailed Description	2SK1835 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High ...
Datasheet	K1835 PDF File

Overview

2SK1835 Silicon N-Channel MOS FET Application www.
DataSheet4U.
com High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit TO-3P D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % www.
DataSheet4U.
com 2.
Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Ts...

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