2SC4332 Datasheet (data sheet) PDF





2SC4332 Datasheet, NPN SILICON EPITAXIAL TRANSISTOR

2SC4332   2SC4332  

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DATA SHEET SILICON POWER TRANSISTORS 2 SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING T he 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed s witching and features a very low www.Da taSheet4U.com collector-to-emitter satu ration voltage. This transistor is idea l for use in switching regulators, DC/D C converters, motor drivers, solenoid d rivers, and other low-voltage power sup ply devices, as well as for high-curren t switching. PACKAGE DRAWING (Unit: mm ) FEATURES • Low collector saturatio n voltage VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A) • Fast switching sp eed: tf ≤ 0.3 µs MAX. (IC = 3

2SC4332 Datasheet, NPN SILICON EPITAXIAL TRANSISTOR

2SC4332   2SC4332  
A) • High DC current gain ABSOLUTE M AXIMUM RATINGS (TA = 25°C) Collector t o Base Voltage Collector to Emitter Vol tage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipati on Total Power Dissipation Junction Tem perature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) Note1 100 60 7.0 5.0 10 2.5 15 1.0 Note2 V V V A A A W Note3 IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg , 2.0 W °C °C 150 −55 to +150 Notes 1. PW ≤ 10 ms, d uty cycle ≤ 50% 2. Printing borard mo unted 3. 7.5 mm x 0.7 mm, ceramic board mounted Electrode Connection 1. Base 2 . Collector 3. Emitter 4. Fin (collecto r) 2 The information in this document is subject to change without notice. B efore using this document, please confi rm that this is the latest version. No t all devices/types available in every country. Please check with local NEC re presentative for availability and addit ional information. Document No. D16430E J1V0DS00 (1st edition) Date Published O ctober 2002 NS CP(K) Printed in Japan © 2002 2SC4332, 2SC4332-Z ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector to Emitter Voltage Collector to Emitter Voltage Symbol VCEO(SUS) VC EX(SUS) Conditions IC = 3.0 A, IB = 0.3 A, L = 1 mH IC = 3.0 A, IB1 = −IB2 = 0.3 A, VBE(OFF) = −1.5 V, L








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