Power Transistors. 2SD234 Datasheet

2SD234 Transistors. Datasheet pdf. Equivalent

Part 2SD234
Description Silicon NPN Power Transistors
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD234 DESCRIPTION ·W.
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2SD234
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD234
DESCRIPTION
·With TO-220 package
·Complement to type 2SB434
APPLICATIONS
·For low frequency power amplifier
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PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
50
6
3
1.5
25
150
-55~150
UNIT
V
V
V
A
W



2SD234
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD234
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ,IB=0
V(BR)CBO
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V(BR)EBO
Collector-base breakdown voltage
Emitter-base breakdown voltage
IC=1mA ,IE=0
IE=1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.3A
ICBO Collector cut-off current
VCB=40V; IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0.5A ; VCE=1V
COB Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
IC=0.5A ; VCE=10V
MIN TYP. MAX UNIT
50 V
60 V
6V
1.2 V
1.5 V
10 µA
10 µA
40 240
90 pF
3 MHz
hFE Classifications
ROY
40-80 70-140 120-240
2





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