9T15GH Datasheet | AP9T15GH





(PDF) 9T15GH pdf File Download

Part Number 9T15GH
Description AP9T15GH
Manufacture Advanced Power Electronics
Total Page 4 Pages
PDF Download Download 9T15GH PDF File

Features: AP9T15GH/J Pb Free Plating Product Adva nced Power Electronics Corp. ▼ Low Ga te Charge ▼ www.DataSheet4U.com Capab le of 2.5V gate drive G S ▼ Single Dr ive Requirement ▼ RoHS Compliant D N -CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 50mΩ 12.5A Des cription The Advanced Power MOSFETs fro m APEC provide the designer with the be st combination of fast switching, rugge dized device design, ultra low on-resis tance and cost-effectiveness. G D S TO -252(H) G D S TO-251(J) Absolute M aximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-So urce Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rati ng 20 ±16 12.5 8 60 12.5 0.1 -55 to 15 0 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Ra nge Operating Junction Temperature Rang e Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Therm.

Keywords: 9T15GH, datasheet, pdf, Advanced Power Electronics, AP9T15GH, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

Advanced Power
Electronics Corp.
AP9T15GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
www.DataSheet4U.com Capable of 2.5V gate drive
Single Drive Requirement
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
50mΩ
12.5A
GDS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
20
±16
12.5
8
60
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
10
110
Units
/W
/W
Data and specifications subject to change without notice
200908052-1/4

           






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)