C3675 Datasheet: 2SC3675





C3675 2SC3675 Datasheet

Part Number C3675
Description 2SC3675
Manufacture Sanyo Semicon Device
Total Page 3 Pages
PDF Download Download C3675 Datasheet PDF

Features: Ordering number:EN1800E NPN Triple Diff used Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High -Voltage Switching Applications Applica tions · High voltage amplifiers. · Hi gh-voltage switching applications. · D ynamic focus applications. www.DataShee t4U.com Package Dimensions unit:mm 201 0C [2SC3675] Features · High breakdow n voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). JEDEC : TO- 220AB EIAJ : SC46 Specifications Absol ute Maximum Ratings at Ta = 25˚C Param eter Collector-to-Base Voltage Collecto r-to-Emitter Voltage Emitter-to-Base Vo ltage Collector Current Collector Curre nt (Pulse) Collector Dissipation Juncti on Temperature Storage Temperature Symb ol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc= 25˚C 1 : Base 2 : Collector 3 : Emitt er Conditions Ratings 1500 900 5 100 300 10 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector C.

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Ordering number:EN1800E
NPN Triple Diffused Planar Silicon Transistor
2SC3675
900V/100mA High-Voltage Amplifier
High-Voltage Switching Applications
Applications
· High voltage amplifiers.
· High-voltage switching applications.
· Dynamic focus applications.
www.DataSheet4U.com
Features
· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=2.8pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2010C
[2SC3675]
Specifications
JEDEC : TO-220AB
EIAJ : SC46
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB=900V, IE=0
VEB=4V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
IC=20mA, IB=4mA
IC=20mA, IB=4mA
IC=1mA, IE=0
IC=1mA, RBE=
IE=1mA, IC=0
VCB=100V, f=1MHz
Ratings
1500
900
5
100
300
10
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
30
6
1500
900
5
2.8
max
10
10
5
2
Unit
µA
µA
MHz
V
V
V
V
V
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3

        






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