OD-880E EMITTERS Datasheet

OD-880E Datasheet, PDF, Equivalent


Part Number

OD-880E

Description

HIGH-POWER GaAlAs IR EMITTERS

Manufacture

OptoDiode

Total Page 2 Pages
Datasheet
Download OD-880E Datasheet


OD-880E
HIGH-POWER GaAlAs IR EMITTERS
OD-880E
EPOXY
DOME
.145
MAX
.178
.195
www.DataSheet4U.com .022
.080
.017
ANODE
(CASE)
.209
.220
.100
1.00
MIN
CATHODE
.041
.036
45°
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission
• High uniform output
• TO-46 Header
All dimensions are nominal in inches unless otherwise
specified.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Peak Emission Wavelength, LP
Spectral Bandwidth at 50%, $L
Half Intensity Beam Angle, Q
TEST CONDITIONS
IF = 100mA
IF = 50mA
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 100mA
IR = 10MA
VR = 0V
Fall Time
MIN
TYP
MAX
UNITS
20 30
mW
880 nm
80 nm
90 Deg
1.55 1.9 Volts
5 30
Volts
17 pF
0.5 Msec
0.5 Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10Ms, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com

OD-880E
HIGH-POWER GaAlAs IR EMITTERS
OD-880E
www.DataSheet4U.com
THERMAL DERATING CURVE
200
180
160
INFINITE
HEAT SINK
140
120
NO
HEAT SINK
100
80
60
40
20
0
25
50 75
AMBIENT TEMPERATURE (°C)
100
DEGRADATION CURVE
100
90
80
IF = 20mA
IF = 50mA
MAXIMUM PEAK PULSE CURRENT
10
t = 10Ms
1 t = 100Ms
t = 500Ms
0.1
Ip
0.01
0.01
t
D
=
t
T
T
0.1 1 10
DUTY CYCLE, D (%)
RADIATION PATTERN
100
80
60
100
70
60
50
101
TCASE = 25°C
NO PRE BURN-IN PERFORMED
IF = 100mA
102 103
STRESS TIME, (hrs)
104
105
FORWARD I-V CHARACTERISTICS
4
3
2
1
0
012 34
FORWARD VOLTAGE, VF (volts)
SPECTRAL OUTPUT
100
5
6
40
20
0
–100 –80 –60 –40 –20 0 20 40 60 80 100
BEAM ANGLE, Q(deg)
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–50
–25 0 25 50 75
AMBIENT TEMPERATURE (°C)
100
POWER OUTPUT vs FORWARD CURRENT
1,000
80
100
60
40
20
0
750
800 850 900 950
WAVELENGTH, L(nm)
10 DC
PULSE
10Ms, 100Hz
1,000
1
10
100 1,000
FORWARD CURRENT, IF (mA)
10,000
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com


Features HIGH-POWER GaAlAs IR EMITTERS FEATURES E POXY DOME .145 MAX .080 .017 .178 .195 ANODE (CASE) OD-880E • High reliabi lity liquid-phase epitaxially grown GaA lAs .209 .220 • 880nm peak emission • High uniform output • TO-46 Heade r .100 .041 All dimensions are nomina l in inches unless otherwise specified. www.DataSheet4U.com 1.00 MIN .022 C ATHODE .036 45° RoHS ELECTRO-OPTICA L CHARACTERISTICS AT 25°C PARAMETERS T otal Power Output, Po TEST CONDITIONS I F = 100mA IF = 50mA IF = 100mA IR = 10M A VR = 0V MIN 20 TYP 30 880 80 90 30 17 MAX UNITS mW nm nm Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF Peak Emission Wa velength, LP Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, V R 5 1.55 1.9 Volts Volts Msec Msec pF Deg 0.5 0.5 ABSOLUTE MAXIMUM RATI NGS AT 25°C CASE Continuous Forward Cu rrent Reverse Voltage Power Dissipation 1 190mW 100mA 5V 3A Peak Forward Curre nt (10Ms, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) .
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