ASI3005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.
B
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
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FEATURES:
PG = 4.5 dB min. at 5 W / 3,000 MHz Hermetic Microstrip Package Omnigold™ Metalization System
DIM A L
G
H J
F I K M NP
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