08P06P SPD08P06P Datasheet

08P06P Datasheet PDF, Equivalent


Part Number

08P06P

Description

SPD08P06P

Manufacture

Infineon Technologies

Total Page 9 Pages
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08P06P
Preliminary data
SPD08P06P
SPU08P06P
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
www.DataSheet·4UA.cvomalanche rated
· dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
Type
SPD08P06P
SPU08P06P
Package Ordering Code
P-TO252 Q67040-S4153
P-TO251-3-1 Q67040-S4154
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Pin 1 PIN 2/4 PIN 3
GDS
Value
-8.8
-6.2
-35.2
70
4.2
6
Unit
A
mJ
kV/µs
±20
42
-55...+175
55/175/56
V
W
°C
Page 1
1999-11-22

08P06P
Preliminary data
SPD08P06P
SPU08P06P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
www.DataSheet4TUh.ceormmal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 3.6 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -250 µA
Gate threshold voltage, VGS = VDS
ID = -250 µA, Tj = 25 °C
Zero gate voltage drain current
VDS = -60 V, VGS = 0 V, Tj = 25 °C
VDS = -60 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -10 V, ID = -6.2 A
V(BR)DSS -60
-
-
VGS(th) -2.1
-3
-4
IDSS
IGSS
- -0.1 -1
- -10 -100
- -10 -100
RDS(on) - 0.23 0.3
Unit
V
µA
nA
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
1999-11-22


Features Preliminary data SPD08P06P SPU08P06P S IPMOS ® Power-Transistor Features · Product Summary Drain source voltage Dr ain-source on-state resistance Continuo us drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175° C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · www.D ataSheet4U.com A Type SPD08P06P SPU08 P06P Package P-TO252 Ordering Code Q6 7040-S4153 Pin 1 G PIN 2/4 D PIN 3 S P-TO251-3-1 Q67040-S4154 Maximum Rat ings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous d rain current Value -8.8 -6.2 Unit A ID T C = 25 °C T C = 100 °C Pulsed d rain current ID puls EAS EAR dv/dt -3 5.2 70 4.2 6 kV/µs mJ T C = 25 °C Av alanche energy, single pulse I D = -8. 8 A , VDD = -25 V, R GS = 25 W Avalanch e energy, periodic limited by Tjmax Rev erse diode dv/dt I S = -8.8 A, V DS = -48 , di/dt = 200 A/µs, T jmax = 175 C Gate source voltage Power dissipatio n VGS Ptot Tj , Tstg ±20 42 -55...+175 55/175/56 V W °C T C = 25 °C Opera.
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