2SB557 Transistors Datasheet

2SB557 Datasheet PDF, Equivalent


Part Number

2SB557

Description

Silicon PNP Power Transistors

Manufacture

SavantIC

Total Page 3 Pages
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2SB557
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB557
DESCRIPTION
·With TO-3 package
·Complement to type 2SD427
·High power dissipation
APPLICATIONS
www.DataSheet4·PU.ocwomer amplifier applications
·Recommended for 50W high-fidelity audio
frequency amplifier output stage
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IE Emitter current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-5
-8
8
80
150
-65~150
UNIT
V
V
V
A
A
W

2SB557
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB557
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A ;IB=0
www.DataSheet4UV.(cBoRm)EBO Emitter-base breakdown voltage
IE=-10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE Base-emitter on voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
IC=-5A ; VCE=-5V
VCB=-60V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
COB Output capacitance
fT Transition frequency
IE=0 ; VCB=-10V;f=1.0MHz
IC=-1A ; VCE=-5V
MIN TYP. MAX UNIT
-120
V
-5 V
-2.5 V
-2.0 V
-0.1 mA
-0.1 mA
40 140
20
280 pF
7 MHz
hFE-1 Classifications
RO
40-80
70-140
2


Features SavantIC Semiconductor Product Specific ation Silicon PNP Power Transistors 2 SB557 DESCRIPTION ·With TO-3 package ·Complement to type 2SD427 ·High powe r dissipation APPLICATIONS amplifier ap plications ·Recommended for 50W high-f idelity audio frequency amplifier outpu t stage PINNING(see Fig.2) PIN 1 2 3 Ba se Emitter Collector Fig.1 simplified o utline (TO-3) and symbol DESCRIPTION w ww.DataSheet4U.com ·Power Absolute ma ximum ratings(Ta= ) SYMBOL VCBO VCEO VE BO IC IE PC Tj Tstg PARAMETER Collector -base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissip ation Junction temperature Storage temp erature TC=25 CONDITIONS Open emitter O pen base Open collector VALUE -120 -120 -5 -8 8 80 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Spec ification Silicon PNP Power Transistor s CHARACTERISTICS Tj=25 unless otherwis e specified PARAMETER CONDITIONS MIN 2 SB557 SYMBOL TYP. MAX UNIT V(BR)CEO V Collector-emitter breakd.
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